Modulating the electronic properties of a conducting channel oxide using a ferroelectric

Speaker: 
Matthew S.J. Marshall Department of Applied Physics, Yale University
Seminar Date: 
Friday, September 27, 2013 - 12:00pm
Location: 
BECTON SEMINAR ROOM See map
Prospect Street
New Haven, CT

The ferroelectric field effect modulates the carrier density in an adjacent channel in a non-volatile manner. The electrical polarization of the ferroelectric can couple to the properties of the channel. Because the polarization of the ferroelectric can be switched with an applied voltage, we can therefore modulate the properties of the channel material using electric fields. Here, we show that the structure and properties of channel materials comprised of rare-earth perovskite nickelates (ReNiO3) can be modulated using a ferroelectric. The polarization of the ferroelectric changes not only the carrier concentration of the nickelate, but also modifies the interfacial atomic structure of the channel material. The consequence is a shift in the metal-insulator transition temperature as well as a change in the carrier mobility of the rare earth nickelate layer.

Host: 
Paul Fleury
Seminar Announcement Brochure: 

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