For nanoscale patterning, the Raith EBPG 5000+ and EBPG 5200+ electron-beam lithography systems provide 100kV patterning of 10 nm scale devices. These electron-beam writers are fully automated, with a laser-guided substrate stage providing 15 nm field stitching, 15 nm overlay accuracy, laser height measurement for automatic focus adjustment, and metrology functions for self-calibration. The EBPG is highly regarded for its ease of use and very flexible control software. Yale programs utilizing electron beam lithography include research in optical waveguides, quantum computing, electron transport physics and photonic bandgap engineering.
| EBPG 5000+ | EBPG 5200+ | |
| Accel. voltage | 100 kV | 100 kV |
| Beam current | 0.5 to 150 nA | 0.5 to 350 nA |
| Min spot size | 4 nm | 4 nm |
| Min line width | 10 nm | 10 nm |
| Max clock | 50 MHz | 125 MHz |
| Substrate size | 1 to 15 cm (6 inch) | 1 to 20 cm (8 inch) |
| Detectors | scintillator backscatter | scintillator backscatter and biased secondary ET detector |
| Loader | 10 holder | 10 holder |
| Max field | 1 mm | 1 mm |
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