You might not want to think about it now, but at some point you’ll have to remove the resist from your wafer. The liftoff process dissolves resist in solvents, so that’s simple. If PMMA or ZEP is used as an etch mask, then you can remove the remaining resist simply by programming an oxygen etch step in the same plasma etcher. Just hit it with an oxygen plasma after (say) chlorine or fluorine. (Note that a low-bias barrel etcher will not do. You need a bit of bias to break up the polymer.)
Removing HSQ can be difficult, since it does not etch at all in oxygen. HSQ is a low-density silicon oxide, and so it will etch readily in fluorine plasmas or in hydrofluoric acid. If your device is incompatible with those etchants, then you could put a sacrificial polymer layer under the HSQ. A thin layer of PMMA or photoresist will allow the HSQ to be stripped in solvents.