Electron-Beam Lithography

For nanoscale patterning, the Raith EBPG 5000+ and EBPG 5200+ electron-beam lithography systems provide 100kV patterning of 10 nm scale devices. These electron-beam writers are fully automated, with a laser-guided substrate stage providing 15 nm field stitching, 15 nm overlay accuracy, laser height measurement for automatic focus adjustment, and metrology functions for self-calibration. The EBPG is highly regarded for its ease of use and very flexible control software. Yale programs utilizing electron beam lithography include research in optical waveguides, quantum computing, electron transport physics and photonic bandgap engineering.

  EBPG 5000+ EBPG 5200+
Accel. voltage 100 kV 100 kV
Beam current 0.5 to 150 nA 0.5 to 350 nA
Min spot size 4 nm 4 nm
Min line width 10 nm 10 nm
Max clock 50 MHz 125 MHz
Substrate size 1 to 15 cm (6 inch) 1 to 20 cm (8 inch)
Detectors scintillator backscatter                          scintillator backscatter and biased secondary ET detector
Loader 10 holder 10 holder
Max field 1 mm 1 mm


EBPG Documentation and Training Course